Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT
Source abstract
Abstract
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT). The plasma wave arising from the RTD-gated HEMT is equivalent to active transmission lines and induces negative differential conductance (NDC) of the oscillator. The proposed RTD-gated HEMT oscillator is more compact and has higher oscillation frequency than the transmission line loaded traditional RTD oscillator duo to plasma wave effect. This paper analyses and calculates the oscillation conditions, the relationships between device structures, oscillation frequency and the output power of the oscillator. The presented work may provide a new concept for fabricating terahertz oscillator.
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Research context
OpenAlex topics: Terahertz technology and applications · Semiconductor Quantum Structures and Devices · Superconducting and THz Device Technology
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China
School of Electrical and Information Engineering, Tianjin University 2 , Tianjin 300072, China
Funding
National Key Research and Development Program of China
References (30)
Show source-provided references
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