Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
Source abstract
Abstract
In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Photonic Crystals and Applications · Advanced Optical Imaging Technologies
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Affiliations
Chungbuk National University 1 School of Information and Communication Engineering, , Cheongju, South Korea
Daegu Gyeongbuk Institute of Science and Technology 2 Division of Nano and Energy Convergence Research, , Daegu, South Korea
Seoul National University 3 Department of Electrical and Communication Engineering, , Seoul, South Korea
Seoul National University 4 Department of Physics & Astronomy, , Seoul, South Korea
Funding
National Research Foundation of Korea · Ministry of Science, ICT and Future Planning
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