journal article·2019-09-01Open access

The interface of epitaxial nanographene on GaN by PECVD

Zongyao Li, Yu Xu, Bing Cao, Lin Qi, En Zhao, Song Yang, Chinhua Wang, Jianfeng Wang, Guangyu Zhang, Ke Xu

AIP Advances· Volume 9· Issue 9

Abstract

It is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to synthesize nanographene directly on gallium nitride (GaN) at a low temperature (550°C). The epitaxial nanographene equipped optical transmittance and conductivity comparable to reduced graphene oxide or chemical exfoliated graphene. The Raman spectroscopy and atomic force microscopy (AFM) of the samples before and after growth have been compared. Besides, the interface between nanographene and GaN has been investigated by X-ray photoelectron spectroscopy (XPS). This research will be meaningful for directly integrating graphene with GaN-based optoelectronic and electronic devices.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 1 , Suzhou 215006, China

Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University 2 , Suzhou 215006, China

Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 3 , Suzhou 215123, P. R. China

Suzhou Nanowin Science and Technology Co, Ltd 4 , Suzhou 215123, P. R. China

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 5 , Beijing 100190, P. R. China

Collaborative Innovation Center of Quantum Matter 6 , Beijing 100190, P. R. China

Funding

A Project Funded by the Priority Academic Program Development of Jiangsu Higer Education Institutions · The State Key Program of National Science Foundation of China · National Natural Science Foundation of China

References (32)

Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. Two-dimensional gas of massless Dirac fermions in graphene10.1038/nature04233 ↗
3. The rise of graphene10.1038/nmat1849 ↗
4. The structure of suspended graphene sheets10.1038/nature05545 ↗
5. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems10.1039/c4nr01600a ↗
6. Production and processing of graphene and 2D crystals10.1016/s1369-7021(13)70014-2 ↗
7. Large-area synthesis of high-quality and uniform graphene films on copper foils10.1126/science.1171245 ↗
8. Transfer of CVD-grown monolayer graphene onto arbitrary substrates10.1021/nn201207c ↗
9. Wafer-scale synthesis and transfer of graphene films10.1021/nl903272n ↗
10. GaN decomposition in H2 and N2 at MOVPE temperatures and pressures10.1016/s0022-0248(01)00617-0 ↗
11. Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices10.1002/anie.201306086 ↗
12. Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates10.1016/j.carbon.2014.02.030 ↗
13. Vapour-phase graphene epitaxy at low temperatures10.1007/s12274-012-0205-6 ↗
14. Catalyst-free growth of nanographene films on various substrates10.1007/s12274-010-0086-5 ↗
15. Comparison of graphene growth on arbitrary non-catalytic substrates using low-temperature PECVD10.1016/j.carbon.2015.05.035 ↗
16. Direct growth of patterned graphene on SiO2 substrates without the use of catalysts or lithography10.1039/c4nr02001d ↗
17. Nitride-based semiconductors for blue and green light-emitting devices10.1038/386351a0 ↗
18. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes10.1038/35022529 ↗
19. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices10.1126/science.1195403 ↗
20. Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis10.1021/nn405477f ↗
21. Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt10.1109/tsm.2012.2198676 ↗
22. Investigating the mechanism of hysteresis effect in graphene electrical field device fabricated on SiO2 substrates using Raman spectroscopy10.1002/smll.201102468 ↗
23. Interpretation of Raman spectra of disordered and amorphous carbon10.1103/physrevb.61.14095 ↗
24. Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects10.1016/j.ssc.2007.03.052 ↗
25. Raman spectroscopy as a versatile tool for studying the properties of graphene10.1038/nnano.2013.46 ↗
26. On the roughness of single- and bi-layer graphene membranes10.1016/j.ssc.2007.02.047 ↗
27. A universal transfer route for graphene10.1039/c3nr04739c ↗
28. Van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst10.1021/nn305486x ↗
29. A symmetrical bi-electrode electrochemical technique for high-efficiency transfer of CVD-grown graphene10.1088/0957-4484/25/14/145704 ↗
30. The direct synthesis of graphene on a gallium nitride substrate10.1002/cvde.201307085 ↗
31. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material10.1038/nnano.2008.83 ↗
32. Highly conducting graphene sheets and Langmuir-Blodgett films10.1038/nnano.2008.210 ↗