Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene
Source abstract
Abstract
We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.
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Research context
OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · Supercapacitor Materials and Fabrication
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Korea University 1 School of Electrical Engineering, , Seoul 136-701, Korea
Korea University 4 Department of Materials Science Engineering, , Seoul 136-701, Korea
Dongguk University 2 Quantum Functional Semiconductor Research Center, , Seoul 100-715, Korea
Hanyang University 3 Department of Materials Science and Engineering, , Seoul 133-791, Korea
References (37)
Show source-provided references
1. Science · 1998 · 282 · 166010.1126/science.282.5394.1660 ↗
2. Science · 1998 · 281 · 95110.1126/science.281.5379.951 ↗
3. Appl. Phys. Lett. · 1996 · 69 · 36310.1063/1.118061 ↗
4. Appl. Phys. Lett. · 2002 · 81 · 184510.1063/1.1506778 ↗
5. Appl. Phys. Lett. · 2011 · 99 · 19210910.1063/1.3660274 ↗
6. Science · 2000 · 287 · 101910.1126/science.287.5455.1019 ↗
7. Rev. Mod. Phys. · 2006 · 78 · 80910.1103/RevModPhys.78.809 ↗
8. Rev. Mod. Phys. · 2010 · 82 · 163310.1103/RevModPhys.82.1633 ↗
9. Nature · 2001 · 413 · 71610.1038/35099527 ↗
10. Phys. Rev. Lett. · 2003 · 91 · 22720110.1103/PhysRevLett.91.227201 ↗
11. Appl. Phys. Lett. · 2012 · 100 · 19240910.1063/1.4714504 ↗
12. Nature · 2005 · 438 · 19710.1038/nature04233 ↗
13. Nature · 2005 · 438 · 20110.1038/nature04235 ↗
14. Nat. Phys. · 2009 · 5 · 89410.1038/nphys1421 ↗
15. Science · 2007 · 317 · 153010.1126/science.1144359 ↗
16. J. Phys. Chem. C · 2009 · 113 · 998210.1021/jp903397u ↗
17. Nano Letters · 2008 · 9 · 22010.1021/nl802810g ↗
18. Adv. Fun. Mater. · 2013 · 23 · 32310.1002/adfm.201201418 ↗
19. Phys. Rev. B · 2008 · 77 · 19542810.1103/PhysRevB.77.195428 ↗
20. Nature · 2009 · 457 · 70610.1038/nature07719 ↗
21. Phys. Rev. Lett. · 2006 · 97 · 18740110.1103/PhysRevLett.97.187401 ↗
22. Science · 2009 · 324 · 131210.1126/science.1171245 ↗
23. Nano Letters · 2007 · 7 · 275810.1021/nl071254m ↗
24. Phys. Rep. · 2009 · 473 · 5110.1016/j.physrep.2009.02.003 ↗
25. J. Solid State Electro. · 2014 · 18 · 55310.1007/s10008-013-2291-0 ↗
26. Jap. J. Appl. Phys. · 2000 · 39 · 3
27. J. Mater. Chem. · 2012 · 22 · 254510.1039/C1JM14564A ↗
28. J. Electrochem. Soc. · 2004 · 151 · A161110.1149/1.1789411 ↗
29. Phys. Rev. Lett. · 2008 · 100 · 04720910.1103/PhysRevLett.100.047209 ↗
30. Nano Letters · 2009 · 9 · 386710.1021/nl9020733 ↗
31. Phys. Rev. Lett. · 2010 · 104 · 09680410.1103/PhysRevLett.104.096804 ↗
32. New J. Phys. · 2008 · 10 · 03300210.1088/1367-2630/10/3/033002 ↗
33. J. Phys. Chem. C · 2011 · 115 · 1832710.1021/jp204757u ↗
34. Phys. Rev. Lett. · 2005 · 94 · 21720610.1103/PhysRevLett.94.217206 ↗
35. Phys. Rev. B · 1996 · 54 · 1660810.1103/PhysRevB.54.16608 ↗
36. Appl. Phys. Lett. · 2003 · 82 · 120610.1063/1.1554482 ↗
37. Appl. Phys. Lett. · 2013 · 102 · 03210610.1063/1.4788928 ↗