Thickness-dependent Raman active modes of SnS thin films
Source abstract
Abstract
Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic properties of SnS thin films using first-principles calculations. We identify the characteristic Raman active phonon modes and their dependence on the number of layers and stacking sequences. The clear separation between surface modes and bulk modes is clarified for SnS thin films. In addition, we have clarified the relation between stacking structures and Raman active modes for bilayer SnS. Our results will serve the experimental characterization of such thin monochalcogenide systems through Raman spectra and will expedite their device fabrication.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University 1 , Gakuen 2-1, Sanda, Hyogo 669-1337, Japan
Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati 2 , Tirupati 517507, Andhra Pradesh, India
Department of Materials Engineering, The University of Tokyo 3 , Tokyo, Japan
Center for Spintronics Research Network (CSRN), Osaka University 4 , Toyonaka 560-8531, Japan
National Institute for Materials Science (NIMS) 5 , Namiki 1-1, Tsukuba 305-0044, Japan
Funding
Japan Society for the Promotion of Science · Collaborative Research in Engineering, Science and Technology Centre
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