DataVXAIP AdvancesPaper
journal article·2021-07-01Open access

Investigation on the leakage current characteristics of large size GaN diodes

J. Yang, D. G. Zhao, Z. S. Liu, P. Chen, F. Liang

AIP Advances· Volume 11· Issue 7
Publisher pageOpen full text
Source abstract

Abstract

The leakage mechanism of large size GaN p–i–n diodes is studied, and the possible reasons are analyzed. It is found that (i) the leakage current of most diode chips is not proportional to their area, and the leakage problem deteriorates seriously when the size of the device increases; (ii) the open circuit voltage of the photovoltaic device decreases with the increasing leakage current of GaN diodes; and (iii) low density nanotubes are detected in larger size GaN diodes, which is one of the important reasons for the large leakage of large size GaN diodes.
Source: crossref · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Advanced Energy Technologies and Civil Engineering Innovations · Ga2O3 and related materials · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China

School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Strategic Priority Research Program of Chinese Academy of Sciences · Youth Innovation Promotion Association of the Chinese Academy of Sciences · Beijing Nova Program

References (12)

Show source-provided references
1. J. Disp. Technol. · 1999 · 3 · 16010.1109/jdt.2007.89533 ↗
2. Liquid-semiconductor-based micro power source using radioisotope energy conversion
3. Design and characterization of GaN p-i-n diodes for betavoltaic devices10.1016/j.sse.2017.06.010 ↗
4. Optimization design of GaN betavoltaic microbattery10.1007/s11431-011-4739-8 ↗
5. Electrical performance of GaN diode as betavoltaic isotope battery energy converter10.1109/23.903805 ↗
6. Gallium nitride for nuclear batteries10.4028/www.scientific.net/amr.343-344.56 ↗
7. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h10.1088/1674-4926/40/2/022801 ↗
8. Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes10.1088/1674-4926/40/5/052802 ↗
9. Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density10.1063/5.0005112 ↗
10. Observation of nanopipes in α-GaN crystals10.1016/0022-0248(95)00082-8 ↗
11. Investigation of micropipe and defects in molten KOH etching of 6H n-silicon carbide (SiC) single crystal10.1016/j.matlet.2013.03.079 ↗
12. The origin of nanopipes and micropipes in non-cubic GaN and SiC10.1557/proc-512-113 ↗