Flexible engineering of light emission in monolayer MoS2 via direct laser writing for multimode optical recording
Source abstract
Abstract
Direct laser writing has been proved to be capable for effective modulation of optical and electrical properties of various nanomaterials. In this work, we designed a flexible direct laser writing approach to engineer photoluminescence (PL) properties of monolayer MoS2 and present its potential application in optical recording. PL spectra evolution of monolayer MoS2 under continuous-wave laser writing has been explored, where its PL energy can be precisely controlled by changing the writing time. This feature enables a multimode optical recording with spectral contrast in monolayer limit materials for high-capacity data storage technologies. Here, we constructed a proof-of-principle multimode optical recording on monolayer MoS2 based on the PL wavelength division multiplexing scheme and discussed the relevant challenges for practical applications. Our flexible approach with a mask-free feature and high spatial resolution is promising for applications in two-dimensional material-based information storage and optoelectronic devices.
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Research context
OpenAlex topics: 2D Materials and Applications · Quantum Dots Synthesis And Properties · Neural Networks and Reservoir Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University 1 , Taiyuan, Shanxi 030006, China
Collaborative Innovation Center of Extreme Optics, Shanxi University 2 , Taiyuan, Shanxi 030006, China
Department of Physics, Shanxi Datong University 3 , 037009 Datong, China
Funding
National Key Research and Development Program of China · 1331KSC · PCSIRT · Overseas Expertise Introduction Project for Discipline Innovation · National Natural Science Foundation of China · Major Research Plan
References (31)
Show source-provided references
1. Patterning and electronic tuning of laser scribed graphene for flexible all-carbon devices10.1021/nn204200w ↗
2. Femtosecond laser induced micropatterning of graphene film10.1016/j.matlet.2011.02.057 ↗
3. Ablation and patterning of carbon nanotube film by femtosecond laser irradiation10.3390/app9153045 ↗
4. Randomly distributed plasmonic hot spots for multilevel optical storage10.1021/acs.jpcc.8b03710 ↗
5. Two-color laser printing of individual gold nanorods10.1021/nl401788w ↗
6. Robust micropatterns on graphene oxide films based on the modification of fluorescence lifetime for multimode optical recording10.1016/j.carbon.2018.10.046 ↗
7. Laser scribing of high-performance and flexible graphene-based electrochemical capacitors10.1126/science.1216744 ↗
8. Direct laser micropatterning of GeSe2 nanostructures film with controlled optoelectrical properties10.1039/c3ra46790b ↗
9. Athermally photoreduced graphene oxides for three-dimensional holographic images10.1038/ncomms7984 ↗
10. Giant refractive-index modulation by two-photon reduction of fluorescent graphene oxides for multimode optical recording10.1038/srep02819 ↗
11. Three-dimensional patterning of solid microstructures through laser reduction of colloidal graphene oxide in liquid-crystalline dispersions10.1038/ncomms8157 ↗
12. Five-dimensional optical recording mediated by surface plasmons in gold nanorods10.1038/nature08053 ↗
13. An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides10.1039/c4cs00265b ↗
14. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
15. Laser thinning and patterning of MoS2 with layer-by-layer precision10.1038/s41598-017-15350-4 ↗
16. Improved photoelectrical properties of MoS2 films after laser micromachining10.1021/nn501821z ↗
17. Patterning of periodic ripples in monolayer MoS2 by using laser irradiation10.3938/jkps.69.1505 ↗
18. Unveiling the growth mechanism of MoS2 with chemical vapor deposition: From 2D planar nucleation to self-seeding nucleation10.1021/acs.cgd.7b01486 ↗
19. Versatile and scalable micropatterns on graphene oxide films based on laser induced fluorescence quenching effect10.1364/oe.25.031025 ↗
20. Reversible photoluminescence tuning by defect passivation via laser irradiation on aged monolayer MoS210.1021/acsami.9b10688 ↗
21. Photochemical reaction in monolayer MoS2 via correlated photoluminescence, Raman spectroscopy, and atomic force microscopy10.1021/acsnano.6b00895 ↗
22. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating10.1021/nl4011172 ↗
23. Atomic-layered MoS2 as a tunable optical platform10.1002/adom.201600323 ↗
24. All-optical reversible manipulation of exciton and trion emissions in monolayer WS210.3390/nano10010023 ↗
25. Tunable photoluminescence of monolayer MoS2 via chemical doping10.1021/nl403036h ↗
26. Electrical control of neutral and charged excitons in a monolayer semiconductor10.1038/ncomms2498 ↗
27. Biexciton emission from edges and grain boundaries of triangular WS2 monolayers10.1021/acsnano.5b07214 ↗
28. Enhanced local photoluminescence of a multilayer MoS2 nanodot stacked on monolayer MoS2 flakes10.1364/ome.7.001365 ↗
29. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity10.1038/nature14417 ↗
30. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides10.1021/nn5073495 ↗
31. Spectrally resolved photoluminescence imaging of ZnO nanocrystals at single-particle levels10.1021/jz200370s ↗