PbSnSe/PbSrSe quantum well materials for thermophotovoltaic devices
Source abstract
Abstract
Multiple quantum well (MQW) materials composed of Pb0.81Sn0.19Se wells and Pb0.80Sr0.20Se barriers with intersubband energy gaps of 343 meV and 450 meV were modeled for thermophotovoltaic (TPV) device performance. The effect of L-valley degeneracy removal in these (111)-oriented IV-VI semiconductor quantum wells was evaluated. Degeneracy splitting reduces the effective densities of states in both the valence and conduction bands. Thermally generated intrinsic charge carrier concentrations are smaller by a factor of three as compared to bulk materials with the same bandgap energies. A current-matched dual junction TPV cell made from these MQW materials in a generator with a 1215°C radiator is predicted to have a power density of 2.34 W/cm2, 49% better than the power density generated by a cell made from bulk materials with the same bandgap energies.
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Research context
OpenAlex topics: Thermal Radiation and Cooling Technologies · solar cell performance optimization · Advanced Thermodynamics and Statistical Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical, Electronics, and Communication Engineering, School of Engineering, American University of Ras Al Khaimah 1 , P.O. Box 10021, Ras Al Khaimah, UAE
School of Electrical and Computer Engineering, Gallogly College of Engineering, University of Oklahoma 2 , 110 West Boyd Street, Norman, Oklahoma 73019-1102, USA
References (23)
Show source-provided references
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