journal article·2017-12-01Open access

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Liang Song, Kai Fu, Zhili Zhang, Shichuang Sun, Weiyi Li, Guohao Yu, Ronghui Hao, Yaming Fan, Wenhua Shi, Yong Cai, Baoshun Zhang

AIP Advances· Volume 7· Issue 12

Abstract

In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Nano Technology and Nano Bionics, University of Science and Technology of China 1 , Suzhou 215123, People’s Republic of China

Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS 2 , Suzhou 215123, People’s Republic of China

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology 3 , Wuhan 430074, People’s Republic of China

School of Materials Science and Engineering, Nanjing University of Science and Technology 4 , Xiao Ling Wei 200, Nanjing 210094, People’s Republic of China

Suzhou Powerhouse Electronics Co., Ltd 5 , Suzhou 215123, People’s Republic of China

Funding

Key Research and Development Program of Jiangsu Province · National Key Research and Development Program of China · National Key Scientific Instrument and Equipment Development Projects of China · National Natural Science Foundation of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences

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