Influence of cold isostatic pressing on the magnetic properties of Ni-Zn-Cu ferrite
Source abstract
Abstract
In power electronics, there is the need to develop solutions to increase the power density of converters. Interleaved multicellular transformers allow interleaving many switching cells and, as a result, a possible increase in the power density. This converter is often composed of a magnetic core having the function of an intercell transformer (ICT) and, depending on the complexity of the designed architecture, its shape could be extremely complex. The switching frequencies (1-10 MHz) for the new wide band gap semiconductors (SiC, GaN) allow to interleave switching cell at higher frequencies than silicon-based semiconductors (<1 MHz). Intercell transformers must follow this increase in frequency times-fold the number of switching cells. Current applications for ICT transformers use Mn-Zn based materials, but their limit in frequency drive raises the need of higher frequency magnetic materials, such Ni-Zn ferrites. These materials can operate in medium and high power converters up to 10 MHz. We propose to use Ni0,30Zn0,57Cu0,15Fe2O4 ferrite and to compress it by cold isostatic pressing (CIP) into a a green ceramic block and to machine it to obtain the desired ICT of complex shape prior sintering. We compare the magnetic permeability spectra and hysteresis loops the CIP and uniaxially pressed ferrites. The effect of temperature and sintering time as well as high-pressure on properties will be presented in detail. The magnetic properties of the sintered cores are strongly dependent on the microstructure obtained.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced DC-DC Converters · Silicon Carbide Semiconductor Technologies · Induction Heating and Inverter Technology
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
LAPLACE, Université de Toulouse, CNRS, INPT, UPS 1 , 118 Route de Narbonne, F-31620 Toulouse cedex 9, France
SATIE, ENS Cachan, UMR CNRS 8029, UniverSud Paris 2 , 61 Avenue du President Wilson, F-94235 Cachan, France
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