Relationship between mobility and strain in CVD graphene on h-BN

This study examines the relationship between the electrical properties and Raman spectra of field effect transistors (FETs) produced using chemical vapor deposited (CVD) graphene transferred onto hexagonal boron nitride (h-BN) structures. Carrier mobility values were calculated based on the electrical properties of the fabricated FETs, where the highest carrier mobility was 39 989 cm2/Vs. Carrier mobility increased with a decrease in the full width at half maximum (FWHM) of the 2D-band peak of CVD graphene. A linear relationship with a slope of 2.18 between the G-band and 2D-band peak positions was detected, indicating that a uniaxial strain existed in the CVD graphene FETs. Based on the peak shifts in the 2D-band, it was determined that both compressive and tensile strains were responsible for limiting carrier mobility. Ultimately, the analysis of peak positions and FWHMs of 2D-bands enabled us to evaluate the uniformity of electrical properties of CVD graphene without fabricating specialized measurement devices.