Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
Source abstract
Abstract
High-dielectric constant (k) materials have attracted a lot of attention for use as gate insulators (GIs) that enable low-voltage operation of thin film transistors (TFTs). However, high-k GIs also induce severe degradation in TFT characteristics, such as effective mobility (μeff). Therefore, in this study, a stacked GI structure of ZrO2 and SiO2 was investigated. The mechanism by which the properties of the high-k GI influence TFT operating characteristics was revealed. Based on this mechanism, an optimized stacked GI structure that exhibited a low subthreshold swing and high μeff was found and used to achieve low-voltage operation in a TFT device.
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Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Materials Science and Engineering, Hanyang University 1 , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, South Korea
Division of Nanoscale Semiconductor Engineering, Hanyang University 2 , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, South Korea
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University 3 , 1732, Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 17104, South Korea
Funding
Ministry of Trade, Industry, and Energy of Korea · Korea Display Research Corporation
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