journal article·2015-10-01Open access

Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity

Akihiro Ishida, Hoang Thi Xuan Thao, Hidenari Yamamoto, Yohei Kinoshita, Mamoru Ishikiriyama

AIP Advances· Volume 5· Issue 10

Abstract

Mid-temperature thermoelectric conversion efficiencies of the IV-VI materials were calculated under the Boltzmann transport theory of carriers, taking the Seebeck, Peltier, and Thomson effects into account. The conversion efficiency was discussed with respect to the lattice thermal conductivity, keeping other parameters such as Seebeck coefficient and electrical conductivity to the same values. If room temperature lattice thermal conductivity is decreased up to 0.5W/mK, the conversion efficiency of a PbS based material becomes as high as 15% with the temperature difference of 500K between 800K and 300K.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shizuoka University 1 Faculty of Engineering, , 3-5-1 Johoku, Hamamatsu 432-8561, Japan

Toyota Motor Co. 2 , Mishuku 1200, Susono 410-1193, Japan

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