Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors
Source abstract
Abstract
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are recently used in many display applications due to its high mobility and high stability. However, its processing at low temperature causes defects which affect charge carrier mobility. So, it is essential to completely understand the effects of defects on charge transport mechanism. In this paper, experimental results are presented to investigate the charge carrier mobility of LTPS device. Furthermore, based on the theoretical model, the charge transport characteristic for LTPS has been interpreted. Our results show that, at low gate voltage, the charge transport of LTPS TFT displays multiple trapping and release mechanism, while free charge carrier transport mechanism at high gate voltage.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences 1 , Beijing 100029, China
University of Chinese Academy of Sciences 2 , Beijing 100049, China
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) 3 , Nanjing 210009, China
Funding
Beijing Training Project for the Leading Talents in S&T · National key research and development program · Strategic Priority Research Program of Chinese Academy of Science · National Natural Science Foundation of China
References (19)
Show source-provided references
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