Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
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Affiliations
Southern University of Science and Technology 1 Department of Electrical and Electronic Engineering, , Shenzhen, 518055, China
2Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices, Shenzhen, China
Nanopolis Suzhou 3 Enkris Semiconductor Inc., NW-20v, , 99 Jinji Avenue, 215123, Suzhou, China
Funding
the fundamental research project of science and technology plan of shenzhen · the key laboratories of third-generation semiconductor devices in shen zhen, PRCHINA · key technology development of Si based GaN power devices · the project of energy-efficient si based GaN power devices