journal article·2024-05-01Open access

Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

Wei Jia, Zhiwei Du, Lifan Zhang, Ruimei Yin, Hailiang Dong, Tianbao Li, Zhigang Jia, Bingshe Xu

AIP Advances· Volume 14· Issue 5

Abstract

3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic light-emitting diode on a single chip. In this work, InGaN/GaN micro-truncated pyramid arrays with six equivalent (101̄1) semi-polar facets and one (0001) polar facet were successfully prepared by the metal-organic chemical vapor deposition technology. The average diameter of the obtained uniform micro-truncated pyramids was 6.8 µm with a height of 2.4 µm. According to the results of micro-photoluminescence performed, the InGaN/GaN micro-truncated pyramid arrays can achieve multi-color emission from blue to red. The luminescent positions corresponding to different wavelengths were detected by the cathode luminescence spectrum. The multi-color emission was related to the quantum hybrid structures apart from the discrepancy of In composition in different positions. The developed microstructure can create multi-color emission by combining distinct luminescence modes, which can aid in the design of future optoelectronic devices.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Metal and Thin Film Mechanics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology 1 , Taiyuan, Shanxi 030024, China

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering 2 , Taiyuan, Shanxi 030032, China

East China Institute of Photo Electron IC 3 , Bengbu 233030, China

Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology 4 , Xi’an, Shaanxi 710021, China

Funding

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering · Shanxi Provincial Key Research and Development Project · Natural Science Foundation of Shanxi Province

References (38)

Show source-provided references
1. Visible-color-tunable light-emitting diodes10.1002/adma.201100806 ↗
2. Luminescence properties of InGaN/GaN light-emitting diodes with violet, blue, and green emission10.1007/s40042-020-00041-7 ↗
3. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate10.1021/acsphotonics.7b01453 ↗
4. High-speed parallel micro-LED arrays on Si substrates based on via-holes structure for visible light communication10.1109/led.2022.3186018 ↗
5. Embedded electrode micro-LEDs with high modulation bandwidth for visible light communication10.1109/ted.2022.3231235 ↗
6. White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy10.1364/prj.4.000017 ↗
7. Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding10.1021/acsphotonics.8b00876 ↗
8. Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes10.1088/1361-6528/abc70e ↗
9. High-bandwidth green semipolar (20–21) inGaN/GaN micro light-emitting diodes for visible light communication10.1021/acsphotonics.0c00764 ↗
10. Red emission of inGaN/GaN double heterostructures on GaN nanopyramid structures10.1021/ph500415c ↗
11. Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes10.1016/j.jallcom.2018.09.293 ↗
12. Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array10.1021/nl4021045 ↗
13. Excitonic diffusion in In GaN/GaN core-shell nanowires10.1021/acs.nanolett.5b03611 ↗
14. Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging10.1038/s41598-018-20142-5 ↗
15. GaN based nanorods for solid state lighting10.1063/1.3694674 ↗
16. Electrically driven quantum dot/wire/well hybrid light-emitting diodes10.1002/adma.201102534 ↗
17. Quantum dot emission from site-controlled InGaN∕GaN micropyramid arrays10.1063/1.1815043 ↗
18. Near-red emission from site-controlled pyramidal InGaN quantum dots10.1063/1.2108126 ↗
19. Visible color tunable emission in three-dimensional light emitting diodes by MgO passivation of pyramid tip10.1021/acsami.5b08729 ↗
20. InGaN platelets: Synthesis and applications toward green and red light-emitting diodes10.1021/acs.nanolett.8b04781 ↗
21. Simultaneous growth of various inGaN/GaN core-shell microstructures for color tunable device applications10.1002/pssa.201800361 ↗
22. Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates10.1364/oe.21.00a864 ↗
23. White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids10.1364/oe.23.00a401 ↗
24. Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer10.1016/j.matlet.2018.04.089 ↗
25. GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid10.1016/j.jcrysgro.2015.06.007 ↗
26. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes10.1038/s41598-018-25473-x ↗
27. A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures10.1039/d0na00052c ↗
28. Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires10.1515/nanoph-2019-0328 ↗
29. Stranski–Krastanov mechanism of growth and the effect of misfit sign on quantum dots nucleation10.1016/j.susc.2017.05.018 ↗
30. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness10.1039/d0ra05566b ↗
31. Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations10.1002/pssa.201127278 ↗
32. Study on dislocation annihilation mechanism of the high-quality GaN grown on sputtered AlN/PSS and its application in green light-emitting diodes10.1109/ted.2019.2904110 ↗
33. Full-color single nanowire pixels for projection displays10.1021/acs.nanolett.6b01929 ↗
34. Multi-color broadband visible light source via GaN hexagonal annular structure10.1038/srep05514 ↗
35. Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxy10.1016/0022-0248(93)90763-m ↗
36. High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets10.1002/pssb.201046369 ↗
37. Toward ultimate efficiency: Progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes10.1364/aop.10.000246 ↗
38. State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods10.1038/s41598-020-76042-0 ↗