Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors
Source abstract
Abstract
LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitudinal optical phonon, interface rough, electron-electron (E-E), acoustic phonon, and polarized Coulomb field (PCF), the channel electron mobility of LaAlO3/SrTiO3 HFETs has been calculated and analyzed. The results showed that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs. The heterostructure of the LaAlO3/SrTiO3 system has strong polarization characteristics. This paper is the first to demonstrate that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs, following GaN HFETs, thus demonstrating that LaAlO3/SrTiO3 HFETs also have PCF scattering effect.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Integrated Circuits, Shandong University 1 , Jinan 250101, China
UNSW Materials and Manufacturing Futures Institute, School of Material Science and Engineering, The University of New South Wales 2 , Kensington, New South Wales 2052, Australia
School of Information Science and Electrical Engineering, Shandong Jiaotong University 3 , Jinan 250357, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Shandong Province
References (24)
Show source-provided references
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