Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
Source abstract
Abstract
The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemical analyses by x-ray photoelectron spectroscopy. It is found that both oxygen-inserted (OI) layers and F can reduce ΦBp due to Ti 2p and Si 2p binding energy shifts before forming gas anneal (FGA) and due to retarded Pt diffusion into Si (facilitating low-ΦBp Pt mono-silicide formation) during FGA. The experimental findings also suggest that OI layers are more effective than F for reducing ΦBp.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering and Computer Sciences, University of California 1 , Berkeley, California 94720, USA
Atomera, Inc. 2 , Los Gatos, California 95035, USA
Axcelis Technologies, Inc. 3 , Beverly, Massachusetts 01915, USA
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