Accelerated formation of carbon nanotube network transistors through temperature-controlled solution deposition

Solution-processed carbon nanotube thin-film transistors (CNT-TFTs) are attractive for low-cost and flexible electronics. However, achieving uniform and high-density CNT networks requires careful optimization of deposition parameters. In this study, we demonstrate that controlling deposition temperature and time can significantly enhance CNT adsorption and network formation efficiency. By varying temperature (RT to 150 °C) and time (1–7 min), we show that CNT-TFTs fabricated at elevated temperatures exhibit improved electrical performance, including higher on-state current and reduced variability. Scanning electron microscopy confirms denser and more homogeneous networks under optimized conditions. These findings offer a simple and effective strategy for scalable CNT-TFT fabrication and integration into flexible and large-area electronics.