Characteristics of Schottky gated field-effect transistors utilizing cellulose nanoparticles

Despite the increased interest in renewable and biodegradable cellulose electronics, biomaterial transistors remain largely unexplored. This study presents the electronic behavior of a Schottky gated field-effect transistor (FET) using n-type semiconducting cellulose (bandgap energy: 4.56 eV) nanoparticles with a particle size of 11 nm, demonstrating the potential use of cellulose as a semiconducting material in transistors. The intrinsic cellulose semiconductor FET with a recess gate structure provides beneficial properties for amplification at negative gate voltages and a high on/off ratio suitable for the non-volatile memory effect at positive gate voltages. Additional advances in the development of cellulose metal semiconductor FETs may be attained by fabricating nanometer-size devices with a nano-electromechanical system. The fabrication of cellulose devices can advance environmentally sustainable and biodegradable electronics, a major milestone in the field of renewable energy and portable (flexible/paper) electronics.