Residual-free reactive ion etching of gold layers
Source abstract
Abstract
Metal contacts on semiconductors devices are normally defined by lift-off process, because no well-defined etch processes exist for some rare metals. In this work, an RIE process for gold contacts is introduced which requires a high-density plasma, generated by electron cyclotron resonance. The proof is given by the residual-free etching without fence-generation and micromasking in the vicinity of the mask.
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Research context
OpenAlex topics: Semiconductor materials and devices · Plasma Diagnostics and Applications · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory for Surface Refinement and Thin Film Technology Dept. 06, Munich University of Applied Sciences 1 , Munich D 80335, Bavaria, Germany
Walter Schottky Institut, Technische Universität München 2 , 4 Am Coulombwall, Garching D 85748, Bavaria, Germany
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