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journal article·2024-04-01Open access

A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

Yung Ryel Ryu, Sung Ki Hong, E. Fred Schubert, Dong-Min Jeon, Dong-Soo Shin, Jong-In Shim, Sang-Mook Kim, Jong Hyeob Baek

AIP Advances· Volume 14· Issue 4
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Source abstract

Abstract

We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays.
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Research context

Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

ZOGAN Semi 1 , Pyeongtaek, Gyeonggi-do 17757, Republic of Korea

Korea Photonics Technology Institute 2 , Gwangju 6100, Republic of Korea

Future Chips Constellation, Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute 3 , Troy, New York 12180, USA

Department of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE, Hanyang University ERICA 4 , Ansan, Gyeonggi-do 15588, Republic of Korea

Funding

The Korea Minister of Trade, Industry, and Energy · the Korea Minister of Trade, Industry, and Energy

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