Effect of substrate orientation on band structure of bulk III-V semiconductors
Source abstract
Abstract
We present a detailed theory of the effects of crystal orientation on the properties of semiconductors. Our formalism allows us to study arbitrary crystallographic orientations of various compound semiconductors within any band model and crystal symmetry. For an illustration of its applicability, we present here results (band structure and effective masses) for only a few higher symmetry substrate orientations and concentrate on bulk cubic systems for materials such as GaInPAs/GaAs, GaInPAs/InP, GaInAsSb/GaSb, and GaInAsSb/InAs. Such cases were not discussed before.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
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Affiliations
Department of Experimental Physics, Wroclaw University of Science and Technology 1 , Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
Department of Physics and Computer Science, Wilfrid Laurier University 2 , Waterloo, Ontario N2L3C5, Canada
Funding
Natural Sciences and Engineering Research Council of Canada
References (33)
Show source-provided references
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