Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure
Source abstract
Abstract
This study introduces an enhanced high electron mobility transistor with a lattice-matched AlInGaN/GaN heterojunction and a composite gate structure (CGS). The CGS comprises a recessed gate and a P-type cap layer gate. The P-type cap layer has a limited ability to increase the threshold voltage of the device. To address this, a recessed gate structure based on the P-type cap layer is proposed to further elevate the threshold voltage. The optimized threshold voltage reaches 7.3 V, accompanied by a transconductance of 177.5 mS/mm. In addition, the concentration of two-dimensional electron gas (2DEG) is increased by using the more strongly spontaneously polarized AlInGaN barrier layer. Moreover, by adjusting the Al and In components in the AlInGaN barrier layer to match the lattice of GaN, not only can scattering be reduced, carrier mobility can be increased, device saturation current can be increased, trap density can be reduced, and the influence of the trap effect on gate leakage current can be alleviated. Through meticulous optimization of the Al and In components in AlInGaN, the saturated drain output current of CSG-HEMT at Vgs = 20 V is 2337.96 mA/mm, marking a substantial 30% improvement over traditional HEMTs. In addition, the gate drain current is effectively reduced, greatly improving the safety of the device. These results underscore the substantial potential of the enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure in the realm of high-power devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology , Xiamen 361024,
Funding
Natural Science Foundation of Fujian Province · Industry-University-Research Project of Xiamen City
References (43)
Show source-provided references
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