journal article·2021-07-01Open access

Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates

Xin Liang, Hua Zhou, Hui-Qiong Wang, Lihua Zhang, Kim Kisslinger, Junyong Kang

AIP Advances· Volume 11· Issue 7

Abstract

Fabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (12̄10)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(12̄10)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1−xMgxO films.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University 1 , Xiamen 361005, People’s Republic of China

School of Physics, Shandong University 2 , Jinan 250100, People’s Republic of China

Department of Physics, Xiamen University Malaysia 3 , Sepang 43900, Selangor, Malaysia

Center for Functional Nanomaterials, Brookhaven National Laboratory 4 , Upton, New York 11973, USA

Funding

National Natural Science Foundation of China · Xiamen University Malaysia Research Fund

References (31)

Show source-provided references
1. ACS Appl. Mater. Interfaces · 2012 · 4 · 271710.1021/am300359h ↗
2. Thin Solid Films · 2019 · 674 · 10710.1016/j.tsf.2019.02.007 ↗
3. J. Cryst. Growth · 2010 · 312 · 87510.1016/j.jcrysgro.2010.01.009 ↗
4. Appl. Phys. Lett. · 2002 · 80 · 152910.1063/1.1456266 ↗
5. Appl. Phys. Lett. · 2013 · 102 · 19190210.1063/1.4805005 ↗
6. J. Appl. Phys. · 2003 · 94 · 733610.1063/1.1623923 ↗
7. Appl. Phys. Lett. · 2011 · 98 · 26191310.1063/1.3604782 ↗
8. Phys. Rev. B · 2007 · 76 · 19545010.1103/physrevb.76.195450 ↗
9. Appl. Phys. Lett. · 2014 · 105 · 01111710.1063/1.4889914 ↗
10. J. Cryst. Growth · 2016 · 435 · 610.1016/j.jcrysgro.2015.11.012 ↗
11. Opt. Mater. Express. · 2014 · 4 · 234610.1364/ome.4.002346 ↗
12. CrystEngComm · 2012 · 14 · 163710.1039/c2ce06315h ↗
13. Proc. SPIE · 2014 · 8987 · 89871P10.1117/12.2045555 ↗
14. J. Am. Ceram. Soc. · 1965 · 48 · 40910.1111/j.1151-2916.1965.tb14778.x ↗
15. Appl. Phys. Lett. · 2014 · 104 · 03210710.1063/1.4862789 ↗
16. J. Phys. D: Appl. Phys. · 2013 · 46 · 24510310.1088/0022-3727/46/24/245103 ↗
17. Appl. Phys. Lett. · 2014 · 104 · 05112010.1063/1.4864282 ↗
18. Appl. Phys. Lett. · 2013 · 102 · 15351010.1063/1.4802486 ↗
19. J. Appl. Phys. · 2005 · 98 · 04130110.1063/1.1992666 ↗
20. New J. Phys. · 2011 · 13 · 08501210.1088/1367-2630/13/8/085012 ↗
21. Surf. Sci. · 2002 · 519 · 20110.1016/s0039-6028(02)02211-2 ↗
22. Surf. Sci. · 2002 · 504 · 27110.1016/s0039-6028(02)01107-x ↗
23. J. Catal. · 2020 · 390 · 10910.1016/j.jcat.2020.07.026 ↗
24. Appl. Phys. Lett. · 2001 · 78 · 123710.1063/1.1350632 ↗
25. Phys. Rev. B · 2001 · 63 · 10410310.1103/physrevb.63.104103 ↗
26. J. Phys.: Condens. Matter · 2008 · 20 · 23522110.1088/0953-8984/20/23/235221 ↗
27. Appl. Phys. Lett. · 2007 · 91 · 20192310.1063/1.2815662 ↗
28. J. Cryst. Growth · 2005 · 278 · 28810.1016/j.jcrysgro.2005.01.021 ↗
29. Appl. Phys. Lett. · 1999 · 75 · 408810.1063/1.125545 ↗
30. J. Appl. Phys. · 2005 · 98 · 05491110.1063/1.2039273 ↗
31. Appl. Phys. Lett. · 2015 · 107 · 02211110.1063/1.4926980 ↗