Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation

Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10−8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal–oxide–semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.