Nondestructive analysis of threading mixed dislocations in SiC using x-ray topography and birefringence
Source abstract
Abstract
In this study, we combined x-ray topography (XRT) and birefringence imaging to identify the Burgers vectors in threading mixed dislocations (TMDs) in SiC. XRT was utilized to determine the screw components of the Burgers vectors, while the edge components were ascertained using birefringence images obtained by polarized light microscopy. Our analysis, validated against transmission electron microscopy and large-angle convergent beam electron diffraction, provides a novel, nondestructive approach for examining defects in SiC power devices. The results demonstrate a significant advancement in the characterization of TMDs, contributing insights into enhancing the quality and reliability of semiconductor devices. This research paves the way for future developments in SiC technology, highlighting the importance of a detailed dislocation analysis in the field of semiconductor materials.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8601,
Department of Materials Process Engineering, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464-8603,
Toray Research Center Inc. 3 , 3-2-11 Sonoyama, Otsu 520-8567,
Mipox Corporation 4 , 18 Satsuki-cho, Kanuma, Tochigi 322-0014,
Funding
New Energy and Industrial Technology Development Organization
References (31)
Show source-provided references
1. Bulk and epitaxial growth of silicon carbide10.1016/j.pcrysgrow.2016.04.018 ↗
2. Material science and device physics in SiC technology for high-voltage power devices10.7567/jjap.54.040103 ↗
3. Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes10.4028/www.scientific.net/msf.353-356.299 ↗
4. Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes10.1063/1.1505994 ↗
5. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias10.1063/1.1496498 ↗
6. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation10.1038/s41598-022-17060-y ↗
7. Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation10.1038/s41598-022-23691-y ↗
8. Relationship between threading dislocation and leakage current in 4H-SiC diodes10.1063/1.4718527 ↗
9. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers10.1063/1.2221525 ↗
10. Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs
11. Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode10.1039/d3ce00295k ↗
12. Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET10.1080/09500839.2013.798047 ↗
13. Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography10.35848/1347-4065/abab46 ↗
14. Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED10.1080/09500839.2015.1100762 ↗
15. Transmission electron microscopy analysis of a threading dislocation with $c+a$ burgers vector in 4H-SiC10.1143/apex.5.081301 ↗
16. Investigation of dislocations inducing leakage current on SiC junction barrier Schottky diode by two-photon-excited band-edge photoluminescence10.4028/www.scientific.net/msf.1004.451 ↗
17. Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H–SiC IGBT10.7567/1347-4065/ab5ee8 ↗
18. Direct determination of burgers vectors of threading mixed dislocations in 4H-SiC grown by PVT method10.1007/s11664-015-4317-0 ↗
19. Design of automatic detection algorithm for dislocation contrasts in birefringence images of SiC wafers10.35848/1347-4065/abde29 ↗
20. Observation of in-plane shear stress fields in off-axis SiC wafers by birefringence imaging10.1107/s1600576722006483 ↗
21. Polarized light observation of semiconductor wafers for power devices
22. Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging10.1016/j.diamond.2023.110192 ↗
23. Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography10.1016/j.jcrysgro.2003.08.065 ↗
24. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC10.1063/1.4818357 ↗
25. Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography10.1016/j.jcrysgro.2008.11.017 ↗
26. Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector10.1016/j.actamat.2014.08.027 ↗
27. Identification of lattice defects by convergent-beam electron diffraction10.1093/oxfordjournals.jmicro.a050898 ↗
28. Analysis of partial and stair-rod dislocations by large angle convergent beam electron diffraction10.1016/0304-3991(94)90007-8 ↗
29. Dislocation contrast in large angle convergent-beam electron diffraction patterns10.1080/01418619208205595 ↗
30. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate10.1063/1.5024704 ↗
31. Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates10.1038/s41598-023-29458-3 ↗