journal article·2023-09-01Open access

Failure mode characterizations of semiconductor lasers

Zhanqiang Ren, Qingmin Li, Bocang Qiu, Jin Zhang, Xirong Li, Bin Xu, Kechang Song, Bo Li

AIP Advances· Volume 13· Issue 9

Abstract

Catastrophic optical mirror damage (COMD) and catastrophic optical bulk damage (COBD) are the main factors that affect the reliability of semiconductor lasers. In this paper, we characterize the COMD and COBD failure modes by examining the voltage changes at the current point where failure occurs, as well as by using the electroluminescent technique. Our study reveals that the voltage has an increase at the failure current point for COMD samples, in which failure occurs due to the damage to the facet mirrors; for COBD samples, in which failure occurs inside the laser cavity, the voltage exhibits a decrease and the amount of voltage decrease is roughly proportional to the size of the damaged area.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Laser Material Processing Techniques · Ocular and Laser Science Research · Advanced Optical Sensing Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Opto-electronical Engineering, Xi’an Technological University 1 , Xi’an 710021, China

Xi’an Lumcore Optoelectronics Technologies Co., Ltd. 2 , Xi’an 710077, China

Department of electronic engineering, Xi’an University of Technology 3 , Xi’an 710048, China

Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology 4 , Xi’an 712081, China

References (25)

Show source-provided references
1. Proc. SPIE · 2003 · 4973 · 3410.1117/12.478365 ↗
2. Proc. SPIE · 2004 · 5336 · 7710.1117/12.558737 ↗
3. IEEE J. Sel. Top. Quantum Electron. · 2000 · 6 · 60110.1109/2944.883374 ↗
4. Light Sci. Appl. · 2014 · 3 · e14910.1038/lsa.2014.30 ↗
5. Opt Laser. Technol. · 2015 · 75 · 4010.1016/j.optlastec.2015.06.003 ↗
6. 2015 · 128
7. Sensors · 2022 · 22 · 96310.3390/s22030963 ↗
8. Proc. SPIE · 2007 · 6456 · 64560B10.1117/12.701612 ↗
9. Proc. SPIE · 2008 · 6876 · 68760P10.1117/12.762943 ↗
10. Proc. SPIE · 2010 · 7583 · 75830210.1117/12.842856 ↗
11. J. Lumin. · 1973 · 7 · 33810.1016/0022-2313(73)90074-4 ↗
12. Mater. Sci. Eng., B · 2002 · 91–92 · 48610.1016/s0921-5107(01)01012-1 ↗
13. J. Appl. Phys. · 1979 · 50 · 372110.1063/1.326278 ↗
14. 2009 · 597
15. IEEE J. Sel. Top. Quantum Electron. · 2017 · 23 · 110.1109/jstqe.2017.2686336 ↗
16. Proc. SPIE · 2013 · 8605 · 86050M10.1117/12.2001530 ↗
17. Appl. Phys. Lett. · 2010 · 97 · 23110110.1063/1.3524235 ↗
18. Microelectron. Reliab. · 2016 · 64 · 62710.1016/j.microrel.2016.07.038 ↗
19. Nano Express · 2021 · 2 · 01400110.1088/2632-959x/abdc3d ↗
20. Opt. Express · 2022 · 30 · 4262410.1364/oe.463313 ↗
21. J. Appl. Phys. · 2010 · 107 · 12311610.1063/1.3437395 ↗
22. Appl. Phys. Lett. · 2010 · 96 · 25110510.1063/1.3456388 ↗
23. Microelectron. Eng. · 2011 · 88 · 127210.1016/j.mee.2011.03.024 ↗
24. Jpn. J. Appl. Phys. · 2016 · 55 · 1202BB10.7567/jjap.55.1202bb ↗
25. Appl. Phys. Express · 2021 · 14 · 03650210.35848/1882-0786/abde74 ↗