Optimization of post-annealing temperature for high-performance synaptic transistors based on In–Ga–Zn–O channel and trap layers

Synaptic transistors using an indium–gallium–zinc oxide (IGZO) charge trap layer (CTL) have great potential for high-performance neuromorphic applications due to their excellent stability and high linearity in conductance modulation. Since the high conductivity of the IGZO CTL enhances charge de-trapping performance, the post-annealing process, which directly affects the conductivity of the film, should be carefully conducted. In this study, we investigated the effect of post-annealing temperature (TPA) on the charge de-trapping performance of synaptic transistors. The synaptic transistor showed superior charge de-trapping performance at a TPA of 250 °C, resulting from the increased conductivity of the CTL. Through various electrical and chemical analysis methods, it was revealed that the hydrogen decrease within the CTL and the oxidation–reduction reaction at the interface between the tunneling layer and the CTL contributed to the significant increase in the conductivity of the CTL. The synaptic transistor with the optimal TPA exhibited high linearity of potentiation (αp: 0.56) and depression (αd: −0.65) with 64 conductance levels, enabling the spiking neural network simulation to achieve a high accuracy of 88.75% using a Fashion-MNIST dataset. This work shows that TPA is one of the critical process strategies for the high charge de-trapping performance of the synaptic transistor by inducing the chemical reaction at the CTL interface and hydrogen content change within the CTL.