journal article·2023-07-01Open access

InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure

Zhian Ning, Hailiang Dong, Zhigang Jia, Wei Jia, Jian Liang, Bingshe Xu

AIP Advances· Volume 13· Issue 7

Abstract

A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single waveguide structure almost completely shifts the optical field to the n-region, which reduces the absorption of photons by holes. When the injected current is 1 A, the device’s optical loss decreases from 15.60 to 13.20 cm−1. Ensuring that carrier leakage and internal quantum efficiency are almost unaffected, the InP/In0.55Ga0.45As/AlGaAs asymmetric barrier makes optical loss further reduce. The power of the new-structure device is 0.74 W, and its wall-plug efficiency reaches 70.84%. This structure design will provide both experimental data and theoretical support for the growth of the epitaxial structure of InP-based 1550 nm semiconductor lasers.
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Research context

OpenAlex topics: Photonic and Optical Devices · Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education 1 , Taiyuan, Shanxi 030024, People’s Republic of China

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering 2 , Taiyuan, Shanxi 030024, People’s Republic of China

College of Materials Science and Engineering, Taiyuan University of Technology 3 , Taiyuan, Shanxi 030024, People’s Republic of China

Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology 4 , Xi'an, Shanxi 710021, People’s Republic of China

Funding

National Natural Science Foundation of China · Shanxi"1331 project" · Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

References (33)

Show source-provided references
1. Mater. Today: Proc. · 2021 · 46 · 701510.1016/j.matpr.2021.03.282 ↗
2. J. Am. Chem. Soc. · 2022 · 144 · 614810.1021/jacs.2c01134 ↗
3. Nat. Nanotechnol. · 2021 · 16 · 50810.1038/s41565-021-00895-3 ↗
4. Opt. Express · 2017 · 25 · 1975210.1364/oe.25.019752 ↗
5. Appl. Phys. Lett. · 2009 · 94 · 19110110.1063/1.3133339 ↗
6. IEEE J. Sel. Top. Quantum Electron. · 2015 · 21 · 48010.1109/JSTQE.2015.2415200 ↗
7. J. Cryst. Growth · 2020 · 531 · 12538110.1016/j.jcrysgro.2019.125381 ↗
8. Semicond. Sci. Technol. · 2020 · 35 · 08500810.1088/1361-6641/ab8fbe ↗
9. Quantum Electron. · 2017 · 47 · 27210.1070/qel16294 ↗
10. Proc. SPIE · 2011 · 8039 · 80390B10.1117/12.882930 ↗
11. Quantum Electron. · 2020 · 50 · 112310.1070/qel17448 ↗
12. Proc. SPIE · 2020 · 11301 · 6510.1117/12.2546278 ↗
13. Quantum Electron. · 2021 · 51 · 13310.1070/qel17480 ↗
14. Appl. Phys. Lett. · 2010 · 96 · 24111110.1063/1.3452354 ↗
15. IEEE Photonics J. · 2022 · 14 · 110.1109/jphot.2022.3176547 ↗
16. J. Semicond. · 2015 · 36 · 09401010.1088/1674-4926/36/9/094010 ↗
17. Quantum Electron. · 2018 · 48 · 19710.1070/qel16545 ↗
18. Opt. Lett. · 2015 · 40 · 215010.1364/ol.40.002150 ↗
19. Semicond. Sci. Technol. · 2017 · 32 · 12500810.1088/1361-6641/aa92fd ↗
20. IEEE J. Sel. Top. Quantum Electron. · 2011 · 17 · 171510.1109/jstqe.2011.2109939 ↗
21. J. Appl. Phys. · 2005 · 97 · 12310310.1063/1.1928309 ↗
22. J. Appl. Phys. · 2013 · 114 · 01310410.1063/1.4812571 ↗
23. IEEE Photonics Technol. Lett. · 2019 · 31 · 163510.1109/lpt.2019.2940231 ↗
24. Quantum Electron. · 2019 · 49 · 64910.1070/qel16945 ↗
25. IEEE Photonics Technol. Lett. · 2018 · 30 · 39910.1109/lpt.2018.2793663 ↗
26. Mater. Today: Proc. · 2020 · 30 · 12810.1016/j.matpr.2020.05.097 ↗
27. AIP Adv. · 2017 · 7 · 01501510.1063/1.4973937 ↗
28. Semiconductors · 2013 · 47 · 147510.1134/s106378261311002x ↗
29. IEEE Photonics Technol. Lett. · 2000 · 12 · 132210.1109/68.883817 ↗
30. J. Cryst. Growth · 2006 · 286 · 24710.1016/j.jcrysgro.2005.09.026 ↗
31. 2006 · R3-41
32. Semiconductors · 2004 · 38 · 36010.1134/1.1682615 ↗
33. IEEE J. Sel. Top. Quantum Electron. · 2013 · 19 · 150121110.1109/jstqe.2013.2239961 ↗