Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
Source abstract
Abstract
The gate-all-around (GAA) nanosheet (NS) junctionless transistor (JLT) is an attractive candidate for advanced technology nodes in CMOS scaling. Here, the channel width-dependent transconductance (gm) degradation and threshold voltage (Vth) shift of GAA NS JLTs were investigated via numerical simulation. Compared to bulk neutral channels, a pronounced surface accumulation channel limited the overall electrical characteristics of GAA NS JLTs at narrow widths. Additionally, the variation in Vth of GAA NS JLTs was much smaller than that in tri-gate JLTs. Quantum mechanical effects in GAA NS JLTs with a very narrow width were also investigated.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Joellabuk-do 55324, South Korea
Funding
National Research Foundation of Korea
References (32)
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