The influence of interaction between oxygen vacancies on set process in resistive switching: A case of MgO
Source abstract
Abstract
The influence factor of filaments consisted of oxygen vacancies (VOs) is important for resistive switching. In this paper, the interaction between VOs in MgO and its influence on VO-filaments are studied using density functional theory. It reveals that the VOs in MgO tend to be aggregation state. The distribution of energy level for VO pair in band gap changes with different configurations. The interaction between VO chains also results in their aggregation state in MgO insulator. The calculation results show that with the diameter of filament increasing, the formation energy per VO decreases and the filaments presents semiconductor-metal transition. Based on these calculation results, the set process of MgO based resistive switching is discussed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Science, Civil Aviation University of China , Tianjin 300300, China
Funding
The foundation of civil aviation university of china
References (29)
Show source-provided references
1. Reproducible resistance switching in polycrystalline NiO films10.1063/1.1831560 ↗
2. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
3. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide10.1038/nature25747 ↗
4. A study on set process and its influence on performance of resistive switching10.1002/pssa.201700546 ↗
5. Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure10.1016/j.jallcom.2015.02.168 ↗
6. Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N210.1002/pssa.201532993 ↗
7. Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells10.1063/1.3621835 ↗
8. Multi-mode resistive switching behaviors induced by modifying Ti interlayer thickness and operation scheme10.1016/j.jallcom.2016.01.177 ↗
9. Optically modulated resistive switching in BiFeO3 thin film10.1002/pssa.201533035 ↗
10. Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt10.1063/1.4875918 ↗
11. Conduction mechanisms on high retention annealed MgO-based resistive switching memory devices10.1038/s41598-018-33198-0 ↗
12. Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface10.1016/j.apsusc.2017.11.026 ↗
13. Conduction mechanism of resistive switching films in MgO memory devices10.1063/1.4712628 ↗
14. Oxygen vacancy chain and conductive filament formation in hafnia10.1063/1.4989621 ↗
15. Giant tunnelling magnetoresistance at room temperature with MgO(100) tunnel barriers10.1038/nmat1256 ↗
16. Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device10.1063/1.3429024 ↗
17. Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures10.1039/c7cp00062f ↗
18. First-principles simulation: Ideas, illustrations and the CASTEP code10.1088/0953-8984/14/11/301 ↗
19. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism10.1103/physrevb.41.7892 ↗
20. Generalized gradient approximation made simple10.1103/physrevlett.77.3865 ↗
21. General methods for geometry and wave function optimization10.1021/j100203a036 ↗
22. The thermal expansion of thoria, periclase and diamond
23. First principles study on oxygen vacancy formation in rock salt-type oxides MO (M: Mg, Ca, Sr and Ba)10.1016/j.ceramint.2012.10.079 ↗
24. Exciton thermoreflectance of MgO and CaO10.1016/0038-1098(73)90754-0 ↗
25. Special points for Brillouin-zone integrations10.1103/physrevb.13.5188 ↗
26. First-principles study of native point defects in ZnO10.1103/physrevb.61.15019 ↗
27. First-principles optical spectra for F centers in MgO10.1103/physrevlett.108.126404 ↗
28. Theoretical description of metal/oxide interfacial properties: The case of MgO/Ag(001)10.1016/j.apsusc.2016.08.087 ↗
29. Systematic study of the effect of HSE functional internal parameters on the electronic structure and band gap of a representative set of metal oxides10.1002/jcc.24744 ↗