Show source-provided references
1. Journey of tin chalcogenides towards high performance thermoelectrics and topological materials
10.1039/c8cc02230e ↗5. SnSe, the rising star thermoelectric material: A new paradigm in atomic blocks, building intriguing physical properties
10.1039/d1mh00091h ↗6. Achieving high figure of merit in p-type polycrystalline Sn0.98Se via self-doping and anisotropy-strengthening
10.1016/j.ensm.2017.08.014 ↗8. Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering
10.1111/jace.15088 ↗9. Energy filtering of charge carriers: Current trends, challenges, and prospects for thermoelectric materials
10.1002/adfm.201901789 ↗10. Extraordinary thermoelectric performance realized in n-type PbTe through multiphase nanostructure engineering
10.1002/adma.201703148 ↗11. Broad temperature plateau for thermoelectric figure of merit ZT > 2 in phase-separated PbTe0.7S0.3
10.1038/ncomms5515 ↗14. General strategies to improve thermoelectric performance with an emphasis on tin and germanium chalcogenides as thermoelectric materials
10.1039/d1ta10421g ↗24. Synergistic effect of indium nano-inclusions to enhance interface phonon scattering in polycrystalline SnSe for thermoelectric applications
10.1016/j.jallcom.2020.157358 ↗25. Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals
10.1039/C5EE03366G ↗27. Effect of iodine doping on the electrical, thermal and mechanical properties of SnSe for thermoelectric applications
10.1039/d0cp06130a ↗28. Realizing an enhanced Seebeck coefficient and extremely low thermal conductivity in anharmonic Sb-substituted SnSe nanostructures
10.1016/j.jallcom.2022.165961 ↗29. Layered tin chalcogenides SnS and SnSe: Lattice thermal conductivity benchmarks and thermoelectric figure of merit
10.1021/acs.jpcc.2c02401 ↗31. Low thermal conductivity and optimized thermoelectric properties of p-type Te-Sb2Se3: Synergistic effect of doping and defect engineering
10.1021/acsami.9b07313 ↗34. Thermoelectric enhancements in PbTe alloys due to dislocation-induced strains and converged bands
10.1002/advs.201902628 ↗35. Simultaneous optimization of electrical and thermal transport properties of Bi0.5Sb1.5Te3 thermoelectric alloy by twin boundary engineering
10.1016/j.nanoen.2017.05.031 ↗36. The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe
10.1039/c6ra23904h ↗37. X-ray photoelectron spectra and electronic structure of quasi-one-dimensional SbSeI crystals
10.5488/cmp.10.1.101 ↗44. Enhancing the thermoelectric performance of SnSe1−xTex nanoplates through band engineering
10.1039/c7ta02677c ↗45. Distinct impact of alkali-ion doping on electrical transport properties of thermoelectric p-type polycrystalline SnSe
10.1021/jacs.6b04181 ↗47. Topotactic Anion-Exchange in Thermoelectric Nanostructured Layered Tin Chalcogenides with Reduced Selenium Content
10.1039/C7SC05190E ↗48. Facile chemical synthesis and enhanced thermoelectric properties of Ag doped SnSe
10.1039/c7ra05819e ↗49. Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe
10.1063/1.4975603 ↗50. Optimizing the average power factor of p-type (Na, Ag) co-doped polycrystalline SnSe
10.1039/c9ra00566h ↗51. Thermoelectric transport properties of pristine and Na-doped SnSe1−xTex polycrystals
10.1039/c5cp05510e ↗52. Enhancing p-type thermoelectric performances of polycrystalline SnSe via tuning phase transition temperature
10.1021/jacs.7b05881 ↗53. Controlled grain boundary interfaces of reduced graphene oxide in Ag2Se matrix for low lattice thermal conductivity and enhanced power factor for thermoelectric applications
10.1016/j.jpowsour.2022.231045 ↗54. Theoretical model for predicting thermoelectric properties of tin chalcogenides
10.1039/d0cp03117h ↗59. Effect of substitutional Pb doping on bipolar and lattice thermal conductivity in p-type Bi0.48Sb1.52Te3
10.3390/ma10070763 ↗62. Synergistic effect of grain boundaries and phonon engineering in Sb substituted Bi2Se3 nanostructures for thermoelectric applications
10.1016/j.jcis.2021.12.027 ↗