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journal article·2020-10-01Open access

Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures

Xi Wang, Kai He, Xing Chen, Yang Li, Chun Lin, Qinyao Zhang, Zhenhua Ye, Liwei Xin, Guilong Gao, Xin Yan, Gang Wang, Yiheng Liu, Tao Wang, Jinshou Tian

AIP Advances· Volume 10· Issue 10
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Source abstract

Abstract

The capacitance–voltage characteristics of metal–insulator–semiconductor structures based on Hg1−xCdxTe (x = 0.218) with CdTe passivation are studied before and after the passivation annealing process. We found that after vacuum annealing at 300 °C for 24 h, the micromorphology of the passivation layer was significantly improved, and as the fixed charge density decreased from 1.3 × 1012 cm−2 to 1.0 × 1010 cm−2, the fast surface state density decreased from 2 × 1013 cm−2 eV−1 to 3 × 1012 cm−2 eV−1, with a minimum value of 1.2 × 1011 cm−2 eV−1. From these findings, combined with the secondary ion mass spectroscopy analysis, we conclude that the annealing process propagates an equivalent electrical surface for CdTe/HgCdTe uniformly from the principal physical interface to the inside of the bulk material, effectively improving the characteristics of the CdTe passivation layer.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences 1 , Shanghai 200083, China

Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi’an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS) 2 , Xi’an, Shaanxi 710119, China

Institute of Industrial Science, The University of Tokyo 3 , 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan

University of Chinese Academy of Sciences 4 , Beijing 100049, China

Funding

the Key Laboratory Infrared Imaging Materials and Devices of Chinese Academy of Sciences · the Natural Science Basic Research Plan in Shaanxi Province of China

References (13)

Show source-provided references
1. Third-generation infrared photodetector arrays10.1063/1.3099572 ↗
2. Analysis of the electrical properties of different HgCdTe passivations for infrared detectors10.1007/s11664-019-07253-z ↗
3. Surface treatment effects on the I-V characteristics of HgCdTe LW infrared photovoltaic detectors10.1117/12.977302 ↗
4. Characterization of CdTe passivation layers grown by evaporation with thermal treatments10.1117/12.900748 ↗
5. Studies on surface processing and passivation of p-Hg1−xCdxTe10.1088/0268-1242/23/1/015016 ↗
6. Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface10.1063/1.2203940 ↗
7. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes10.1063/1.4921593 ↗
8. Annealing of au doped HgCdTe covered by electron beam evaporated CdTe
9. 2006 · 200
10. Improved passivation effect due to controlled smoothing of the CdTe-HgCdTe interface gradient by thermal annealing10.1007/s11664-019-07415-z ↗
11. Surface studies on HgCdTe using non-aqueous iodine-based polishing solution10.1007/s11664-017-5764-6 ↗
12. The effect of wet etching on surface properties of HgCdTe10.1007/s11664-009-0844-x ↗
13. Passivation effect of atomic layer deposition of Al2O3 film on HgCdTe infrared detectors10.1007/s11664-016-4686-z ↗