Enhanced optoelectronic properties of thermally evaporated Sb-doped ZnO nanowires via defect structures
Source abstract
Abstract
Sb-doped ZnO nanowires were fabricated on Si (100) substrates by thermal evaporation via the vapor-liquid-solid mechanism at 850 °C, and their optoelectronic properties were examined. Two prominent emission regions at the near band-edge emission and deep-level emission of the pure ZnO nanowires were observed in the photoluminescence spectra. Doping with Sb reduced the intensities of near band edge emission and deep-level emission. Almost no near band-edge emission signal was obtained at Sb ≥ 2.2 at. % and almost no deep-level emission signal was obtained at Sb ≥ 5.46 at. %, owing to the formation of metallic Sb and the +5 oxidation state of the Sb2O5 phases. These results suggest that the Sb dopant content is the critical factor in improving the optoelectronic properties of Sb-doped ZnO nanowires, as revealed by their photoluminescence spectra.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, National Chung Hsing University 1 , Taichung 40247, Taiwan
Department of Chemical Engineering and Materials Science, Chinese Culture University 2 , Taipei 11113, Taiwan
Funding
Ministry of Science and Technology, Taiwan
References (39)
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