Study on the high-power semi-insulating GaAs PCSS with quantum well structure
Source abstract
Abstract
A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Pulsed Power Technology Applications · Integrated Circuits and Semiconductor Failure Analysis · Physical Unclonable Functions (PUFs) and Hardware Security
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Fluid Physics Key laboratory of pulsed power, , CAEP, P.O. Box 919-107, Mianyang 621900, China
Funding
National Defense Basic Scientific Research Program of China · National Natural Science Foundation of China
References (15)
Show source-provided references
1. A theory of low-field, high-carrier-density breakdown in semiconductors
2. Simulation of current filaments in photoconductive semiconductor switches10.1109/PPC.2005.300786 ↗
3. Developments and applications of photoconductive semiconductor switches in pulsed power technology
4. GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay10.1063/1.100879 ↗
5. Photoconductive semiconductor switch experiments for pulsed power applications10.1109/16.64520 ↗
6. Modeling of high power semiconductor switches operated in the nonlinear mode10.1063/1.361066 ↗
7. Ultrafast photoconductive self-switching of subpicosecond electrical pulses10.1109/3.823456 ↗
8. 1987 · 145
9. Fabrication of high voltage ultra-fast photoconductive switches
10. Velocity of current filament at the high gain mode of GaAs power photoconductive swiches10.1016/j.physb.2011.06.082 ↗
11. 1994
12. Peculiar photoconductivity in high-power semi-insulating GaAs photoconductive semiconductor switch10.1109/TPS.2010.2081381 ↗
13. Measurement of the velocity of current filaments in optically triggered, high gain GaAs switches10.1063/1.111266 ↗
14. Photoconductive semiconductor switches10.1109/27.602482 ↗
15. 50 kV semi-insulating GaAs photoconductive semiconductor switch