Fabrication of a high-speed plasmonic reflection/transmission modulator
Source abstract
Abstract
The fabrication of a high-speed plasmonic reflection/transmission modulator for operation at λ0 = 1550 nm is presented and described in detail. Front-side ground and signal contacts provide easy electrical probe access to the device, while allowing the transmission of light through the substrate. Modulation is based on enhanced perturbation of the effective refractive index of grating-coupled surface plasmon polaritons propagating along a metal–oxide–semiconductor structure on silicon. Fabrication steps include deposition of a plasmonic metal patch, deposition of Ohmic contacts, deposition of an Au nanograting coupler overlaid by e-beam lithography, and the application of an intermetal dielectric layer with metalized vias and metal electrical contacts. Current–voltage and capacitance–voltage characteristics verify the electrical integrity of the structure.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Plasmonic and Surface Plasmon Research · Photonic and Optical Devices · Optical Coatings and Gratings
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical Engineering and Computer Science, University of Ottawa 1 , Ottawa, Ontario K1N 6N5, Canada
Centre for Research in Photonics, University of Ottawa 2 , Ottawa, Ontario K1N 6N5, Canada
Department of Physics, University of Ottawa 3 , Ottawa, Ontario K1N 6N5, Canada
References (31)
Show source-provided references
1. 2011
2. Review and perspective on ultrafast wavelength-size electro-optic modulators10.1002/lpor.201400219 ↗
3. Silicon optical modulators10.1038/nphoton.2010.179 ↗
4. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor10.1038/nature02310 ↗
5. High-speed optical modulation based on carrier depletion in a silicon waveguide10.1364/OE.15.000660 ↗
6. Effective electro-optical modulation with high extinction ratio by a graphene–silicon microring resonator10.1021/acs.nanolett.5b00630 ↗
7. High-speed optical phase modulator based on graphene-silicon waveguide10.1109/JSTQE.2016.2545238 ↗
8. Optical modulators with 2D layered materials10.1038/nphoton.2016.15 ↗
9. High-speed plasmonic phase modulators10.1038/nphoton.2014.9 ↗
10. All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale10.1038/nphoton.2015.127 ↗
11. Plasmonic nanophotonic modulators
12. Low-energy high-speed plasmonic enhanced modulator using graphene10.1364/OE.26.007358 ↗
13. High-speed plasmonic modulator in a single metal layer10.1126/science.aan5953 ↗
14. Plasmonic nanostructured metal–oxide–semiconductor reflection modulators10.1021/nl504389f ↗
15. W. Heni et al., “Silicon–organic and plasmonic–organic hybrid photonics,” June 26, 2017, https://pubs.acs.org/doi/abs/10.1021/acsphotonics.7b00224; accessed February 1, 2019.
16. Photonic signal processing on electronic scales: Electro-optical field-effect nanoplasmonic modulator10.1103/PhysRevLett.109.053901 ↗
17. Plasmonics for extreme light concentration and manipulation10.1038/nmat2630 ↗
18. Extraordinary optical absorption through subwavelength slits10.1364/OL.34.000686 ↗
19. Fabrication of a plasmonic modulator incorporating an overlaid grating coupler10.1088/0957-4484/25/49/495202 ↗
20. Metal-insulator-semiconductor devices based on surface plasmon polaritons
21. Metallization systems for silicon integrated circuits10.1109/PROC.1969.7339 ↗
22. 2002
23. P. J. King, “Hafnium oxide-based dielectrics by atomic layer deposition,” Ph.D. thesis (University of Liverpool, 2013).
24. Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films10.1063/1.1866219 ↗
25. Trends of structural and electrical properties in atomic layer deposited HfO2 films10.1016/j.mseb.2003.10.021 ↗
26. 2012
27. Simulation and fabrication of HfO2 thin films passivating Si from a numerical computer and remote plasma ALD10.3390/app7121244 ↗
28. Physical and electrical characteristics of atomic-layer deposition-HfO2 films deposited on Si substrates having different silanol Si-OH densities10.1116/1.4769206 ↗
29. Terahertz optoelectronics with surface plasmon polariton diode10.1038/srep04899 ↗
30. Voltage-controlled active mid-infrared plasmonic devices10.1063/1.3600230 ↗
31. PlasMOStor: A metal–oxide–Si field effect plasmonic modulator10.1021/nl803868k ↗