journal article·2017-03-01Open access

Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

I. Khanonkin, A. K. Mishra, O. Karni, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein

AIP Advances· Volume 7· Issue 3

Abstract

The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the continuous wave probe shows interesting dynamical processes during the initial 2-3 ps after the pump pulse, when carriers originating from two photon absorption contribute the least to the recovery. The effects of optical excitations and electrical bias levels on the recovery dynamics of the gain in energetically different QDs are quantified and discussed. The experimental observations are validated qualitatively using a comprehensive finite-difference time-domain model by recording the time evolution of the charge carriers in the QDs ensemble following the pulse.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Optical Network Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Technion 1 Russell Berrie Nanotechnology Institute, , 32000 Haifa, Israel

Technion 2 Andrew and Erna Viterbi Faculty of Electrical Engineering, , 32000 Haifa, Israel

Stanford University 3 E. L. Ginzton Laboratory, Department of Applied Physics, , Stanford, California 94305, USA

University of Kassel 4 Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, , 34132 Kassel, Germany

Funding

SEQUOIA · Israel Science Foundation

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