journal article·2017-12-01Open access

Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films

Wenhe Wang, Wei Tang, Jiaqing Zhao, Bei Bao, Hui Xing, Xiaojun Guo, Shun Wang, Ying Liu

AIP Advances· Volume 7· Issue 12

Abstract

Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V−1s−1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Artificial Structures and Quantum Control and Shanghai Center for Complex Physics, School of Physics and Astronomy, Shanghai Jiao Tong University 1 , Shanghai 200240, China

Department of Electronic Engineering, Shanghai Jiao Tong University 2 , Shanghai 200240, China

MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology 3 , Wuhan 430074, China

Collaborative Innovation Center of Advanced Microstructures 4 , Nanjing 210093, China

Department of Physics and Materials Research Institute, Pennsylvania State University, University Park 5 , Pennsylvania 16802, USA

Funding

Ministry of Science and Technology of the People's Republic of China · Science and Technology Commission of Shanghai Municipality

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