journal article·2015-09-01Open access

External field effects on aging phenomenon of acceptor-doped BaTiO3 ceramics

Y. Y. Guo, J.-M. Liu, Y. F. Guo, T. Wei, Y. J. Guo, N. Zhang

AIP Advances· Volume 5· Issue 9

Abstract

Our experiments on ferroelectric aging phenomena of a series of acceptor-doped BaTiO3 ceramics demonstrate that after well-aging, all samples show a similar double hysteresis loop under smaller applied electric field, regardless of ionic radius or ionic valence of the acceptor. However, with increasing the applied electric field, the completely constricted loops gradually start to open, indicating the aging effect becomes weak under larger electric field. The unified microscopic mechanism responsible for the similar aging behavior in different acceptor-doped BaTiO3 ceramics may be that the larger field is considered to kinetically facilitate a part of oxygen vacancies short-range hopping. As a result, the defect dipole field provided by oxygen vacancies and the associated defect dipoles frozen in the original states decreases, thus contributing to the weaker aging effect.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003, China

Nanjing University 2 Laboratory of Solid State Microstructures, , Nanjing 210093, China

Nanjing University of Posts and Telecommunications 3 Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging, , Nanjing 210003, China

Civil Aviation University of China 4 College of Science, , Tianjin 300300, China

Jiangsu Second Normal University 5 School of Physics and Electronic Engineering, , Nanjing 210013, China

Henan Province Key Laboratory of Photovoltaic Materials 6 , Xinxiang 453007, China

Funding

National Natural Science Foundation of China

References (27)

Show source-provided references
1. 1962
2. Ferroelectrics · 1988 · 87 · 36110.1080/00150198808201399 ↗
3. 1971
4. 2000
5. J. Phys. Chem. Solids · 1986 · 47 · 45310.1016/0022-3697(86)90042-9 ↗
6. Appl. Phys. Lett. · 2007 · 91 · 12290710.1063/1.2786013 ↗
7. Ferroelectrics · 1978 · 17 · 47310.1080/00150197808236770 ↗
8. Nat. Mater. · 2004 · 3 · 9110.1038/nmat1051 ↗
9. Phys. Rev. B · 2006 · 73 · 09412110.1103/PhysRevB.73.094121 ↗
10. Appl. Phys. Lett. · 2007 · 91 · 03290410.1063/1.2756355 ↗
11. J. Appl. Phys. · 1993 · 73 · 345410.1063/1.352948 ↗
12. Appl. Phys. Lett. · 1994 · 65 · 101810.1063/1.112211 ↗
13. Jpn. J. Appl. Phys. · 1970 · 9 · 123610.1143/JJAP.9.1236 ↗
14. Jpn. J. Appl. Phys. · 1971 · 11 · 3110.1143/JJAP.11.31 ↗
15. J. Phys. Chem. Solids · 1970 · 31 · 178510.1016/0022-3697(70)90168-X ↗
16. Phys. Rev. Lett. · 2000 · 85 · 101610.1103/PhysRevLett.85.1016 ↗
17. Appl. Phys. Lett. · 2007 · 90 · 23290310.1063/1.2746087 ↗
18. Appl. Phys. Lett. · 2004 · 85 · 565810.1063/1.1829394 ↗
19. Appl. Phys. Lett. · 2008 · 92 · 14291010.1063/1.2908230 ↗
20. Acta Crystallogr. A · 1976 · 32 · 75110.1107/S0567739476001551 ↗
21. Appl. Phys. Lett. · 2010 · 97 · 11290610.1063/1.3490700 ↗
22. Appl. Phys. Lett. · 2012 · 101 · 24290310.1063/1.4770311 ↗
23. Appl. Phys. Lett. · 2011 · 99 · 09290710.1063/1.3632079 ↗
24. Appl. Phys. Lett. · 2006 · 89 · 17290810.1063/1.2360933 ↗
25. J. Appl. Phys. · 2008 · 104 · 03410710.1063/1.2963704 ↗
26. Phys. Rev. B · 2007 · 75 · 18410710.1103/PhysRevB.75.184107 ↗
27. Phys. Rev. B · 2005 · 71 · 17410810.1103/PhysRevB.71.174108 ↗