Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process
Source abstract
Abstract
The ferroelectric HfO2 thin film has attracted a lot of research interest due to being Pb free and its excellent compatibility with the Si-based semiconductor process. However, methods to obtain thicker HfO2 thin films with strong ferroelectricity have yet to be explored. In this work, a 50 nm-thick La-doped HfO2 thin film was prepared using pulsed laser deposition, and significant room temperature ferroelectricity with a remnant polarization (Pr) of 27 µC/cm2 was achieved through annealing in N2 with a rapid-heating-temperature process. The ferroelectricity is mainly related to the increase in the content of the (002)-oriented orthogonal phase formed by the rapid-heating-temperature treatment. Furthermore, this special annealing process was verified in a 50 nm-thick Tm-doped HfO2 film, and the Pr of 48 µC/cm2 was observed. This value is the highest value reported so far in doped HfO2 films with a thickness of 50 nm or greater. These results provide a new approach to prepare thicker ferroelectric HfO2-based thin films.
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University 1 , Linfen 041004, China
Research Institute of Materials Science, Shanxi Normal University 2 , Linfen 041004, China
Funding
National Key R&D Program of China · National Natural Science Foundation of China
References (31)
Show source-provided references
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