Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
Source abstract
Abstract
A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2 layer near a silicon substrate, which was not revealed in previous studies probably due to the vitrification caused by electron irradiation. Our experimental results also suggest a crystallographic nature of various surface oxides.
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Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Institute for Materials Science 1 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Research Acceleration Program 2 , Japan Science and Technology Agency, Japan
Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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