Ion-gated transistors based on porous and compact TiO2 films: Effect of Li ions in the gating medium
Source abstract
Abstract
Ion-gated transistors (IGTs) are attractive for chemo- and bio-sensing, wearable electronics, and bioelectronics, because of their ability to act as ion/electron converters and their low operating voltages (e.g., below 1 V). Metal oxides are of special interest as transistor channel materials in IGTs due to their high mobility, chemical stability, and the ease of processing in air at relatively low temperatures (<350 °C). Titanium dioxide is an abundant material that can be used as a channel material in n-type IGTs. In this work, we investigate the role of the morphology of the TiO2 channel (porous vs compact films) and the size of the cations in the gating media ([EMIM][TFSI] and [Li][TFSI] dissolved in [EMIM][TFSI]) to study their role on the electrical characteristics of IGTs. We found that both the film morphology and the type of gating medium highly affect the electrical response of the devices.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Analytical Chemistry and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering, Polytechnique Montréal 1 , Montréal, Quebec H3T 1J4, Canada
Dipartimento di Chimica “Giacomo Ciamician”, Università di Bologna 2 , Via Selmi 2, Bologna 40126, Italy
CIMaINa and Dipartimento di Fisica “Aldo Pontremoli”, Università degli Studi di Milano 3 , Via Celoria 16, Milano 20133, Italy
Department of Engineering Physics, Polytechnique Montréal 4 , Montréal, Quebec H3T 1J4, Canada
Funding
Natural Sciences and Engineering Research Council of Canada · CMC Microsystems · Fonds de Recherche du Québec – Nature et Technologies · Università di Bologna · Ministère de l’Économie, de la Science et de l’Innovation – Québec
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