Local doping of graphene devices by selective hydrogen adsorption
Source abstract
Abstract
N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.
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Research context
OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Seoul National University 1 Department of Physics and Astronomy and Department of Nano Science and Technology, , Seoul 151-747, Republic of Korea
Konkuk University 2 Department of Materials Chemistry and Engineering, , Seoul 143-701, Republic of Korea
Seoul National University 3 Department of Chemistry Education, , Seoul 151-742, Republic of Korea
Incheon National University 4 Department of Physics, , Incheon 406-772, Republic of Korea
Funding
National Research Foundation of Korea
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