Near-field dynamics of broad area diode laser at very high pump levels

Martin Hempel; Jens W. Tomm; Martina Baeumler; Helmer Konstanzer; Jayanta Mukherjee; Thomas Elsaesser

doi:10.1063/1.3664745

journal article·2011-12-01Open access

Near-field dynamics of broad area diode laser at very high pump levels

Martin Hempel, Jens W. Tomm, Martina Baeumler, Helmer Konstanzer, Jayanta Mukherjee, Thomas Elsaesser

AIP Advances· Volume 1· Issue 4

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Source abstract

Abstract

Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.

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Research context

Electronic materials

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Max-Born-Institut 1 , Max-Born-Str. 2 A, 12489 Berlin, Germany

Fraunhofer Institut für Angewandte Festköperphysik 2 , Tullastrasse 72, 79108 Freiburg, Germany

University of Surrey 3 Advanced Technology Institute, , Guildford, GU2 7XH, UK

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