Relation between Debye temperature and energy band gap of semiconductors
Source abstract
Abstract
The work addresses an unresolved topic in solid-state physics, i.e., the dependence of the Debye temperature (TD) on the energy band gap (Eg) of semiconducting materials. The systematic calculation of TD by using the ratio of sound velocity and lattice constant from the literature resulted in the relation TD∝exp(Eg). The exponential relationship is confirmed by a theoretical model based on the microscopic analysis of the electrical conductivity in metals and semiconductors.
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Research context
OpenAlex topics: Surface and Thin Film Phenomena · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Ullrich Photonics LLC 1 , Wayne, Ohio 43466, USA
University of Illinois at Urbana-Champaign 2 School of Chemical Sciences, , Urbana, Illinois 61801, USA
Bowling Green State University 3 Department of Physics and Astronomy, , Bowling Green, Ohio 43403-0209, USA
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