journal article·2015-08-01Open access

Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

Li Qiang Guo, Li Qiang Zhu, Jian Ning Ding, Yu Kai Huang

AIP Advances· Volume 5· Issue 8

Abstract

Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Jiangsu University 1 Micro/Nano Science & Technology Center, , Zhenjiang, 212013, People’s Republic of China

Chinese Academy of Sciences 2 Ningbo Institute of Materials Technology and Engineering, , Ningbo 315201, People’s Republic of China

References (23)

Show source-provided references
1. J. Physiol. · 1996 · 491.1 · 16310.1113/jphysiol.1996.sp021204 ↗
2. Annu. Rev. Physiol. · 2002 · 64 · 35510.1146/annurev.physiol.64.092501.114547 ↗
3. J. Physiol. · 2013 · 591 · 335510.1113/jphysiol.2013.254128 ↗
4. J. Neurosci. · 2012 · 32 · 1168810.1523/JNEUROSCI.0547-12.2012 ↗
5. IEEE T. Neural. Networ. · 2006 · 17 · 21110.1109/TNN.2005.860850 ↗
6. IEEE T. Neural. Networ. · 2012 · 23 · 565
7. Pattern Recogn. Lett. · 2014 · 43 · 1710.1016/j.patrec.2013.06.001 ↗
8. Nat. Commun. · 2014 · 5 · 315810.1038/ncomms4158 ↗
9. J. Mater. Sci. Technol. · 2014 · 30 · 114110.1016/j.jmst.2014.04.015 ↗
10. Adv.Mater. · 2010 · 22 · 244810.1002/adma.201000282 ↗
11. IEEE Electron Device Lett. · 2013 · 34 · 158110.1109/LED.2013.2286074 ↗
12. Appl. Phys. Lett. · 2013 · 103 · 11350310.1063/1.4821067 ↗
13. Nanoscale · 2013 · 5 · 198010.1039/c3nr33734k ↗
14. IEEE Electron Device Lett. · 2010 · 31 · 113710.1109/LED.2010.2061834 ↗
15. Appl.Phys.Lett. · 2014 · 105 · 24350810.1063/1.4904967 ↗
16. J. Am.Chem.Soc. · 2010 · 132 · 667210.1021/ja909110s ↗
17. Microelectron. Eng. · 2011 · 88 · 159010.1016/j.mee.2011.01.076 ↗
18. ASC Nano · 2013 · 7 · 611710.1021/nn401946s ↗
19. J. Neurophysiol. · 1997 · 78 · 124810.1152/jn.1997.78.3.1248 ↗
20. Adv. Mater. · 2013 · 25 · 169310.1002/adma.201203116 ↗
21. Adv. Funct. Mater. · 2010 · 20 · 33010.1002/adfm.200901335 ↗
22. CSH Perspect. Biol. · 2012 · 4 · a005702
23. Pflugers Arch – Eur. J. Physiol. · 2009 · 458 · 56310.1007/s00424-009-0641-7 ↗