Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties
Source abstract
Abstract
In-Ga-Zn-O (IGZO) films deposited by sputtering process generally require thermal annealing above 300°C to achieve satisfactory semiconductor properties. In this work, microwave and e-beam radiation are adopted at room temperature as alternative activation methods. Thin film transistors (TFTs) based on IGZO semiconductors that have been subjected to microwave and e-beam processes exhibit electrical properties similar to those of thermally annealed devices. However spectroscopic ellipsometry analyses indicate that e-beam radiation may have caused structural damage in IGZO, thus compromising the device stability under bias stress.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Chungnam National University 1 , Daejeon 34134, Republic of Korea
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology 2 , Daejeon 34141, Republic of Korea
Division of Physics and Semiconductor Science, Dongguk University 3 , Seoul 04620, South Korea
Biosystems Machinery Engineering, Chungnam National University 4 , Daejeon 34134, Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Trade, Industry and Energy
References (20)
Show source-provided references
1. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors10.1063/1.3236663 ↗
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors10.1038/nature03090 ↗
3. Amorphous oxide semiconductor TFTs for displays and imaging10.1109/jdt.2013.2292580 ↗
4. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application10.1016/j.jnoncrysol.2006.01.073 ↗
5. World’s largest (15-inch) XGA AMLCD panel using IGZO oxide TFT10.1889/1.3069740 ↗
6. 12.1-inch WXGA AMOLED display driven by indium-gallium-zinc oxide TFTs array10.1889/1.3069591 ↗
7. Preparation of IGZO sputtering target and its applications to thin-film transistor devices10.1016/j.ceramint.2012.01.052 ↗
8. Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments10.1038/srep21869 ↗
9. Performance and stability of amorphous In-Ga-Zn-O thin film transistors involving gate insulators synthesized at low temperatures10.1016/j.jallcom.2017.09.270 ↗
10. Electric field-aided selective activation for indium-gallium-zinc-oxide thin film transistors10.1038/srep35044 ↗
11. Reduction of activation temperature at 150°C for IGZO films with improved electrical performance via UV-thermal treatment10.1080/15980316.2016.1172524 ↗
12. Room temperature activation of InGaZnO thin-film transistors via He+ irradiation10.1021/acsami.7b10449 ↗
13. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor10.1063/1.4754627 ↗
14. Simple method to enhance positive bias stress stability of In−Ga−Zn−O thin-film transistors using a vertically graded oxygen-vacancy active layer10.1021/am5063212 ↗
15. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices10.1016/j.tsf.2011.07.018 ↗
16. Relationship between density and refractive index of inorganic solids10.1088/0022-3727/20/4/019 ↗
17. Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O2/NF3 chemistry10.1063/1.1767979 ↗
18. A simple, convenient, low temperature route to grow polycrystalline copper selenide thin films10.1016/s0254-0584(02)00306-1 ↗
19. Enhancing the performance of tungsten doped InZnO thin film transistors via sequential ambient annealing10.1063/1.5021979 ↗
20. Transparent amorphous oxide semiconductor thin film transistor10.1007/s13391-011-0301-x ↗