Richardson-Schottky transport mechanism in ZnS nanoparticles
Source abstract
Abstract
We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, , Beijing 100190, China
Pakistan Institute of Engineering and Applied Sciences 2 Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering, , P.O. Nilore, Islamabad 45650, Pakistan
University of the Punjab 3 , Quaid-e-Azam Campus, Lahore 54000, Pakistan
Funding
National Natural Science Foundation of China · Chinese Academy of Sciences · Ministry of Science and Technology of the People's Republic of China
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