journal article·2012-09-01Open access

pn-control and pn-homojunction formation of metal-free phthalocyanine by doping

Yusuke Shinmura, Masayuki Kubo, Norihiro Ishiyama, Toshihiko Kaji, Masahiro Hiramoto

AIP Advances· Volume 2· Issue 3

Abstract

The Fermi level (EF) of metal-free phthalocyanine (H2Pc), located at the center of the bandgap (4.4 eV), is shifted to 3.8 eV, close to the conduction band (3.5 eV), by cesium carbonate doping and shifted to 4.9 eV, close to the valence band (5.1 eV), by molybdenum oxide doping under oxygen free conditions. Formation of n- and p-type Schottky junctions and pn-homojunctions in single H2Pc films, confirmed by their photovoltaic properties, clearly demonstrates the formation of n- and p-type H2Pc.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Porphyrin and Phthalocyanine Chemistry · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Molecular Science 1 , 5-1 Higashiyama, Myodaiji, Okazaki 444-8787, Aichi, Japan

JST 2 , CREST, 5, Sanbancho, Chiyoda-ku, Tokyo, 102-0075, Japan

References (23)

Show source-provided references
1. Sun · 2005
2. Sol. Energy Mater. Sol. Cells · 2004 · 83 · 12510.1016/j.solmat.2004.02.021 ↗
3. J. Mater. Res. · 2004 · 19 · 192410.1557/JMR.2004.0252 ↗
4. Appl. Phys. Lett. · 1986 · 48 · 18310.1063/1.96937 ↗
5. Appl. Phys. Lett. · 1991 · 58 · 106210.1063/1.104423 ↗
6. J. Appl. Phys. · 1992 · 72 · 378110.1063/1.352274 ↗
7. Mol. Cryst. Liq. Cryst. · 2008 · 491 · 28410.1080/15421400802330960 ↗
8. Adv. Mat. · 2011 · 23 · 332010.1002/adma.201101305 ↗
9. Jpn. J. Appl. Phys. · 1995 · 34 · 380310.1143/JJAP.34.3803 ↗
10. Phys, Rev. Lett. · 2005 · 94 · 03660110.1103/PhysRevLett.94.036601 ↗
11. Solid State Commun. · 1975 · 17 · 119310.1016/0038-1098(75)90284-7 ↗
12. Appl. Phys. Lett. · 2011 · 98 · 07331110.1063/1.3556312 ↗
13. AIP Advances · 2011 · 1 · 03217710.1063/1.3647994 ↗
14. Organic Electronics · 2008 · 9 · 57510.1016/j.orgel.2008.03.003 ↗
15. Chem. Rev. · 2007 · 107 · 123310.1021/cr050156n ↗
16. Jpn. J. Appl. Phys. · 2005 · 44 · 376010.1143/JJAP.44.3760 ↗
17. Appl. Phys. Lett. · 1998 · 73 · 72910.1063/1.121982 ↗
18. Appl. Phys. Lett. · 2011 · 99 · 13330110.1063/1.3643045 ↗
19. Appl. Phys. Lett. · 2007 · 91 · 25350410.1063/1.2825275 ↗
20. Appl. Phys. Lett. · 2008 · 92 · 17330310.1063/1.2918983 ↗
21. SID Int. Symp. Digest Tech. Papers · 2004 · 35 · 15410.1889/1.1821373 ↗
22. J. Cyrstal Growth · 1998 · 187 · 44910.1016/S0022-0248(98)00034-7 ↗
23. Appl. Phys. Lett.